Impact of SiNx passivation on the surface properties of InGaAs photo-detectors-Reference-Cited by-同舟云学术

Impact of SiNx passivation on the surface properties of InGaAs photo-detectors

Published:2015-07-21 Issue:3 Volume:118 Page:034507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhou Ying¹,Ji Xiaoli¹,Shi Ming²³,Tang Hengjing²³,Shao Xiumei²³,Li Xue³,Gong Haimei³,Cao Xun¹^ORCID,Yan Feng¹

Affiliation:

1. College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

2. Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

3. State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Funder

Key Laboratory of Infrared Imaging Materials and Detectors

National Program on Key Basic Rearch Project of China

Shanghai Institute of Technical Physics

Chinese Academy of Sciences (CAS)

Natural Science Foundation of Jiangsu Province (Jiangsu Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926736

Reference27 articles.

1. Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators

2. In-flight proton-induced radiation damage to SCIAMACHY’s extended-wavelength InGaAs near-infrared detectors

3. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs

4. Wavelength extended 2.4μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

5. Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination

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