Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348919
Reference9 articles.
1. Doping and composition profiling in Hg1−xCdxTe by the graded capacitance‐voltage method
2. Calculation of intrinsic carrier concentration in Hg1−xCdxTe
3. Ga0.47 In0.53 As—The material for high-speed devices
4. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
5. Material parameters of In1−xGaxAsyP1−yand related binaries
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