Ga0.47 In0.53 As—The material for high-speed devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/BF02846585.pdf
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4. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs;Journal of Applied Physics;1991-01-15
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