Numerical Method for 2D Simulation of a Silicon MESFET with a Hydrodynamical Model Based on the Maximum Entropy Principle
Author:
Publisher
Society for Industrial & Applied Mathematics (SIAM)
Subject
Applied Mathematics,Computational Mathematics
Link
http://epubs.siam.org/doi/pdf/10.1137/070706537
Reference11 articles.
1. On a hierarchy of macroscopic models for semiconductors
2. Moment closure hierarchies for kinetic theories
3. Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon
4. Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle
5. Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
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