Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon-Reference-Cited by-同舟云学术

Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon

Published:2000-01-01 Issue:4 Volume:10 Page:335-354
ISSN:1065-514X
Container-title:VLSI Design
language:en
Short-container-title:VLSI Design

Author:

Anile A. M.¹,Muscato O.¹,Romano V.²

Affiliation:

1. Dipartimento di Matematica, Universita' di Catania, Viale Andrea Doria 6, Catania 95125, Italy

2. Dipartimento Interuniversitario di Matematica, Politecnico di Bari, Via E. Orabona 4, Bari 70125, Italy

Abstract

Balance equations based on the moment method for the transport of electrons in silicon semiconductors are presented. The energy band is assumed to be described by the Kane dispersion relation. The closure relations have been obtained by employing the maximum entropy principle.The validity of the constitutive equations for fluxes and production terms of the balance equations has been checked with a comparison to detailed Monte Carlo simulations in the case of bulk silicon.

Funder

Ministero dell'Istruzione, dell'Universita e della Ricerca

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Link

http://downloads.hindawi.com/archive/2000/082945.pdf

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