A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle
Author:
Publisher
MDPI AG
Subject
General Physics and Astronomy
Link
http://www.mdpi.com/1099-4300/18/10/368/pdf
Reference45 articles.
1. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
2. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
3. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering
4. Self-consistent Poisson-Schrödinger-Monte Carlo solver: electron mobility in silicon nanowires
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