Abstract
Many advanced semiconductor device designs require the growth of heteroepitaxial layers with lattice parameters differing by up to a few percent with respect to the substrate. X-ray diffraction offers a nondestructive method of determining the extent of relaxation. This paper discusses the sensitivity of x-ray techniques to small amounts of relaxation, describes how relaxation is measured in cubic materials for layer on (001) substrates and suggests nomenclature for the case of asymmetric relaxation.
Publisher
Cambridge University Press (CUP)
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