Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0 2 Interface
Author:
Affiliation:
1. University of California (United States)
Publisher
SPIE
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dipolar interactions between unpaired Si bonds at the(111)Si/SiO2interface;Physical Review B;2000-06-15
2. Dipolar interaction between [111]Pbdefects at the (111)Si/SiO2interface revealed by electron-spin resonance;Physical Review B;1992-02-15
3. Evaluation ofSiO2/(001)Si interface roughness using high-resolution transmission electron microscopy and simulation;Physical Review B;1991-07-15
4. Observation of dipolar interactions betweenPb0defects at the (111) Si/SiO2interface;Physical Review B;1990-08-15
5. Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface;Solid State Communications;1990-06
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