Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference37 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. Hyperfine interactions of thePbcenter at theSiO2/Si(111) interface
3. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
4. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001
2. Characterization of defects in Si and SiO2−Si using positrons;Journal of Applied Physics;1994-11
3. Electron spin resonance characterization and localization of a thermally generated donor inherent to the separation by implantation of oxygen process;Journal of Applied Physics;1993-01-15
4. O environment of unpaired Si bonds (Pbdefects) at the (111)Si/SiO2interface;Physical Review B;1991-11-15
5. Reversible H2 passivation of ∗Si ≡ Si3 interface defects in (1 1 1)Si/SiO2;Physica B: Condensed Matter;1991-04
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