High-NA EUV lithography exposure tool: key advantages and program progress-Reference-Cited by-同舟云学术

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High-NA EUV lithography exposure tool: key advantages and program progress

Published:2021-02-22 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography XII
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Author:

Van Schoot Jan,Lok Sjoerd,van Setten Eelco,Maas Ruben,Troost Kars,Peeters Rudy,Finders Jo,Stoeldraijer Judon,Benschop Jos,Graeupner Paul,Kuerz Peter,Kaiser Winfried,Stammler Thomas

Publisher

SPIE

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. OPC and modeling solution towards 0.55NA EUV stitching;Optical and EUV Nanolithography XXXVII;2024-04-10

2. 超快极紫外光源产生及其在半导体检测中的应用（特邀）;Acta Optica Sinica;2024

3. New EUV mask blank for N3 technology node and beyond;Photomask Technology 2023;2023-11-21

4. EUV APSM mask prospects and challenges;Photomask Technology 2023;2023-11-21

5. On the optical constants of cobalt in the M-absorption edge region;Optik;2023-02

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