EUV reticle defectivity protection options-Reference-Cited by-同舟云学术

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EUV reticle defectivity protection options

Published:2019-10-10 Issue: Volume: Page:
ISSN:
Container-title:Photomask Technology 2019
language:
Short-container-title:

Author:

Lercel Michael J.,Smeets Christophe,van de Kerkhof Mark A.,Chen Amo,van Empel Tjarko,Banine Vadim

Publisher

SPIE

Reference7 articles.

1. Advanced particle contamination control in EUV scanners

2. Progress on 0.33 NA EUV systems for High-Volume Manufacturing

3. EUV lithography and extension for the next generation;Turkot,2019

4. Modeling of defects in integrated circuit photolithographic patterns

5. EUV mask defects and their removal

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Particle mobilization by EUV-induced plasma and fast electrons;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Physics and applications of dusty plasmas: The Perspectives 2023;Physics of Plasmas;2023-12-01

3. EUV reticle defectivity: next steps in the EUV scanner and beyond;Photomask Technology 2023;2023-11-21

4. High-transmission EUV pellicles supporting >400W source power;Optical and EUV Nanolithography XXXV;2022-05-26

5. Particle removal tool to repair particle defects on EUV reticles;Extreme Ultraviolet (EUV) Lithography XII;2021-03-05

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