Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure-Reference-Cited by-同舟云学术

Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Nagahara Seiji¹,Carcasi Michael²,Nakagawa Hisashi³,Buitrago Elizabeth⁴,Yildirim Oktay⁵,Shiraishi Gosuke⁶,Terashita Yuichi⁶,Minekawa Yukie⁶,Yoshihara Kosuke⁶,Tomono Masaru⁶,Mizoguchi Hironori⁶,Estrella Joel²,Nagai Tomoki³,Naruoka Takehiko³,Dei Satoshi⁷,Hori Masafumi⁷,Oshima Akihiro⁸,Vockenhuber Michaela⁴,Ekinci Yasin⁴,Meeuwissen Marieke⁵,Verspaget Coen⁵,Hoefnagels Rik⁵,Rispens Gijsbert⁵,Maas Raymond⁵,Nakashima Hideo¹,Tagawa Seiichi⁸

Affiliation:

1. Tokyo Electron Ltd. (Japan)

2. Tokyo Electron America, Inc. (United States)

3. JSR Corp. (Japan)

4. Paul Scherrer Institute (Switzerland)

5. ASML Netherlands B.V. (Netherlands)

6. Tokyo Electron Kyushu Ltd. (Japan)

7. JSR Micro N.V. (Belgium)

8. Osaka Univ. (Japan)

Publisher

SPIE

Reference28 articles.

1. Cost-effective shrink with Holistic Lithography, extended by EUV,;Brink,2015

2. EUVL readiness for 7nm,;Phillips,2015

3. Progress on enabling EUV Lithography for high volume manufacturing,;Chen,2015

4. Maintaining Moore’s law: enabling cost-friendly dimensional scaling,;Mallik,2015

5. Methods to Improve Radiation Sensitivity of Chemically Amplified Resists by Using Chain Reactions of Acid Generation,;Nagahara,2000

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trends in photoresist materials for extreme ultraviolet lithography: A review;Materials Today;2023-07

2. Optimization of chemically amplified resist formulation based on simple random sampling and kernel density estimation;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-05-15

3. Coarse-Grained Modeling of EUV Patterning Process Reflecting Photochemical Reactions and Chain Conformations;Polymers;2023-04-22

4. Process optimization of contact hole patterns via a simulated annealing algorithm in extreme ultraviolet lithography;Applied Optics;2023-01-23

5. EUV resist performance enhancement by UV flood exposure for high NA EUV lithography;Advances in Patterning Materials and Processes XXXVIII;2021-02-22