Comprehensive defect avoidance framework for mitigating extreme ultraviolet mask defects-Reference-Cited by-同舟云学术

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Comprehensive defect avoidance framework for mitigating extreme ultraviolet mask defects

Published:2014-10-27 Issue:4 Volume:13 Page:043005
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Kagalwalla Abde Ali,Gupta Puneet

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect avoidance for extreme ultraviolet mask defects using intentional pattern deformation;International Conference on Extreme Ultraviolet Lithography 2018;2018-10-09

2. Printability estimation of EUV blank defect using actinic image;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

3. Overcoming EUV mask blank defects: what we can, and what we should;SPIE Proceedings;2017-07-13

4. EUV mask defectivity – a process of increasing control toward HVM;Advanced Optical Technologies;2017-01-01

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