Defect avoidance for extreme ultraviolet mask defects using intentional pattern deformation-Reference-Cited by-同舟云学术

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Defect avoidance for extreme ultraviolet mask defects using intentional pattern deformation

Published:2018-10-09 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2018
language:
Short-container-title:

Author:

Chae Yoo-Jin,Gupta Puneet,Jonckheere Rik

Publisher

SPIE

Reference14 articles.

1. International Technology Roadmap for Semiconductors(ITRS). http://www.itrs2.net/, 2015.

2. Closing the gap for EUV mask repair;Bret,2012

3. Performance of repaired defects and attPSM in EUV multilayer masks.;Deng;SPIE,2002

4. EUV mask defect mitigation through pattern placement.;John;SPIE,2010

5. Efficient pattern relocation for EUV blank defect mitigation.;Zhang;In Proc. ASP-DAC,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm;Optics Express;2021-08-23

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