Direct print EUV patterning of tight pitch metal layers for Intel 18A process technology node-Reference-Cited by-同舟云学术

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Direct print EUV patterning of tight pitch metal layers for Intel 18A process technology node

Published:2022-12-01 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2022
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Author:

Venkatesan Raguraman,Guven Can,Bhawe Dhananjay,Greenwood Arin R.,Zhang Zhenjun,Gupta Prashant,Saksena Pulkit,Rodriguez Robert,Moumen Nadjoua,Bains Balijeet,Aykol Mehmet,Wallace Charles,Bigwood Robert,Fischer Kevin J.

Publisher

SPIE

Reference4 articles.

1. Next generation patterning using EUV lithography;Wallace,2020

2. Managing EPE during process definition;Bigwood,2020

3. OPC modelling and correction solutions for EUV lithography;Word,2011

4. Metrology and deep learning integrated solution to drive OPC model accuracy improvement

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

2. Reliability Modeling of Middle-Of-Line Interconnect Dielectrics in Advanced process nodes;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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