Investigation of trench and contact hole shrink mechanism in the negative tone develop process-Reference-Cited by-同舟云学术

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Investigation of trench and contact hole shrink mechanism in the negative tone develop process

Published:2013-03-29 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Mehta Sohan Singh,Higgins Craig,Chauhan Vikrant,Pal Shyam,Koh Hui Peng,Fakhoury Jean Raymond,Gao Shaowen,Subramany Lokesh,Iqbal Salman,Jeon Bumhwan,Morrison Pedro,Karanikas Chris,Wei Yayi,Cho David R.

Publisher

SPIE

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Necessity of resist model in source mask optimization for negative tone development process;Journal of Micro/Nanolithography, MEMS, and MOEMS;2017-09-13

2. Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node;Advances in Patterning Materials and Processes XXXII;2015-03-23

3. Fundamental study of placement errors in directed self-assembly;Journal of Micro/Nanolithography, MEMS, and MOEMS;2014-07-25

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