Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

Author:

Mehta Sohan S.,Ganta Lakshmi K.,Chauhan Vikrant,Wu Yixu,Singh Sunil,Ann Chia,Subramany Lokesh,Higgins Craig,Erenturk Burcin,Srivastava Ravi,Singh Paramjit,Koh Hui Peng,Cho David

Publisher

SPIE

Reference6 articles.

1. Timing Yield-Aware Color Reassignment and Detailed Placement Perturbation for Bimodal CD Distribution in Double Patterning Lithography

2. Xiaoping Tang; Minsik Cho, “Optimal layout decomposition for double patterning technology,” Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on, vol., no., pp.9, 13, 7-10 Nov. 2011

3. Seong-I Lei; Chu, C.; Wai-Kei Mak, “Double patterning-aware detailed routing with mask usage balancing,” Quality Electronic Design (ISQED), 2014 15th International Symposium on, vol., no., pp.219,223, 3-5 March 2014

4. Investigation of trench and contact hole shrink mechanism in the negative tone develop process

5. Lithographic importance of acid diffusion in chemically amplified resists;Steenwinckel,2005

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