State-of-the-art EUV materials and processes for the 7nm node and beyond-Reference-Cited by-同舟云学术

State-of-the-art EUV materials and processes for the 7nm node and beyond

Published:2017-03-27 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Buitrago Elizabeth¹,Meeuwissen Marieke²,Yildirim Oktay²,Custers Rolf²,Hoefnagels Rik²,Rispens Gijsbert²,Vockenhuber Michaela¹,Mochi Iacopo¹,Fallica Roberto¹,Tasdemir Zuhal¹,Ekinci Yasin¹

Affiliation:

1. Paul Scherrer Institut (Switzerland)

2. ASML Netherlands B.V. (Netherlands)

Publisher

SPIE

Reference12 articles.

1. EUV Lithography Industrialization Progress;Smeets,2016

2. Novel high sensitivity EUV photoresist for sub-7nm node;Nagai,2016

3. Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography;Buitrago,2016

4. E. Buitrago, O. Yildirim, C. Verspaget, N. Tsugama, R. Hoefnagels, G. Rispens, et al., “Evaluation of EUV Resist Performance Using Interference Lithography,” in SPIE Advanced Lithography, 2015, pp. 94221S–94221S-13.

5. The road towards single digit nanometer resolution patterning in mass production: State-of-the-art EUV resists platforms compared;Buitrago,2015

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