EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection-Reference-Cited by-同舟云学术

EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Bonam Ravi¹,Tien Hung-Yu²,Chou Acer²,Meli Luciana¹,Halle Scott¹,Wu Ivy²,Huang Xiaoxia²,Lei Chris²,Kuan Chiyan²,Wang Fei²,Corliss Daniel¹,Fang Wei²,Jau Jack²,Qi Zhengqing John³,Badger Karen³,Turley Christina³,Rankin Jed³

Affiliation:

1. IBM Corp. (United States)

2. Hermes-Microvision Inc., USA (United States)

3. GLOBALFOUNDRIES Inc. (United States)

Publisher

SPIE

Reference12 articles.

1. EUV lithography: NXE platform performance overview;Peeters,2014

2. Performance overview and outlook of EUV lithography systems;Pirati,2015

3. Fabrication of a full-size EUV pellicle based on silicon nitride;Goldfarb,2015

4. Progress on EUV pellicle development;Zoldesi,2014

5. E-beam inspection of EUV programmed defect wafers for printability analysis;Bonam,2013

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3. Performance of Extreme Ultraviolet Coherent Scattering Microscope;Journal of Nanoscience and Nanotechnology;2019-10-01

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5. Wafer Defect Inspection Optimization: Models, Analysis and Algorithms;SSRN Electronic Journal;2019