Single Exposure EUV of 32nm pitch logic structures: Patterning performance on BF and DF masks-Reference-Cited by-同舟云学术

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Single Exposure EUV of 32nm pitch logic structures: Patterning performance on BF and DF masks

Published:2018-03-21 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
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Author:

Blanco Carballo Victor M.,Bekaert Joost,Mao Ming,Kim Ryoung-Han,Gillijns Werner,McIntyre Greg,Biesemans Serge,Nafus Kathleen,Dusa Mircea,De Poortere Etienne,Schiffelers Guido,Kupers Michiel,Franke J. H.,Hendrickx E.,Drissi Y.,Rio D.,Demand M.,Tan L. E.,Jia J.,Hsu S.

Publisher

SPIE

Reference9 articles.

1. SAQP and EUV block patterning of BEOL metal layers on IMEC’s iN7 platform;Bekaert,2017

2. Comparison of N5 EUV-hybrid and EUV single patterning BEOL metal layers;Lariviere,2018

3. Maintaining Moore’s law: enabling cost-friendly dimensional scaling

4. Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform

5. High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tone reversal patterning for advanced technology nodes;Advanced Etch Technology and Process Integration for Nanopatterning XI;2022-05-25

2. NXE:3400 OPC process monitoring: model validity vs process variability;Extreme Ultraviolet (EUV) Lithography XII;2021-02-22

3. Improving exposure latitudes and aligning best focus through pitch by curing M3D phase effects with controlled aberrations;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26

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