High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL-Reference-Cited by-同舟云学术

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High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL

Published:2017-04-07 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Sayan Safak¹,Vanelderen Pieter¹,Hetel Iulian¹,Chan BT¹,Raghavan Praveen¹,Blanco Victor¹,Foubert Philippe¹,D'urzo Lucia¹,De Simone Danilo¹,Vandenberghe Geert¹

Affiliation:

1. IMEC (Belgium)

Publisher

SPIE

Reference5 articles.

1. EUV extendibility via dry development rinse process;Sayan,2016

2. Dry Development Rinse Process for Ultimate Resolution Improvement via Pattern Collapse mitigation;Sayan,2015

3. Design technology co-optimization for N10;Ryckaert,2014

4. Low Track Height Standard cell Design in iN7 using Scaling Boosters;Sherazi,2017

5. Standard cell design in N7: EUV vs. immersion;Chava,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single Exposure EUV of 32nm pitch logic structures: Patterning performance on BF and DF masks;Extreme Ultraviolet (EUV) Lithography IX;2018-03-21

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