Metal oxide EUV photoresist performance for N7 relevant patterns and processes-Reference-Cited by-同舟云学术

Metal oxide EUV photoresist performance for N7 relevant patterns and processes

Published:2016-03-25 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Stowers Jason,Anderson Jeremy,Cardineau Brian,Clark Benjamin,De Schepper Peter,Edson Joseph,Greer Michael,Jiang Kai,Kocsis Michael,Meyers Stephen,Telecky Alan,Grenville Andrew,De Simone Danilo,Gillijns Werner,Vandenberghe Geert

Publisher

SPIE

Reference8 articles.

1. Integrated Fab Process for Metal Oxide EUV Photoresist;Grenville,2015

2. Effect of PAG Distribution on ArF and EUV Resist Performance

3. Directly patterned inorganic hardmask for EUV lithography;Stowers,2011

4. Stochastic Acid Acid-Base Quenching in Chemically Amplified Photoresists: A Simulation Study;Mack,2011

5. Understanding of Stochastic Noise;Kim,2015

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multinuclear Tin-Based Macrocyclic Organometallic Resist for EUV Photolithography;ACS Materials Au;2024-03-27

2. Advanced development for contact-holes of metal-oxide resists;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

3. Mask absorber, mask tone, and wafer process impact on resist line-edge-roughness;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-13

4. Organometallic and coordinative photoresist materials for EUV lithography and related photolytic mechanisms;Coordination Chemistry Reviews;2023-10

5. Advanced development methods for high-NA EUV lithography;Advances in Patterning Materials and Processes XL;2023-05-01