Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks
Author:
Affiliation:
1. Lawrence Berkeley National Lab. (United States)
Publisher
SPIE
Reference11 articles.
1. Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning,;George,2010
2. Relevance of mask-roughness-induced printed line-edge roughness in recent and future extreme-ultraviolet lithography tests
3. Spatial scaling metrics of mask-induced line-edge roughness
4. Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications,;Naulleau,2009
5. EUV Mask Line Edge Roughness,;Zweber,2012
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Data-driven approaches to optical patterned defect detection;OSA Continuum;2019-09-05
2. Assessing Form-Dependent Optical Scattering at Vacuum- and Extreme-Ultraviolet Wavelengths of Nanostructures with Two-Dimensional Periodicity;Physical Review Applied;2019-06-24
3. Evaluation of EUV mask impacts on wafer line-width roughness using aerial and SEM image analyses;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-09-17
4. EUV photolithography mask inspection using Fourier ptychography;Image Sensing Technologies: Materials, Devices, Systems, and Applications V;2018-05-29
5. Evaluation of EUV mask impacts on wafer line-edge roughness using aerial and SEM image analyses (Conference Presentation);Extreme Ultraviolet (EUV) Lithography IX;2018-03-27
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3