GaN-based high-temperature and radiation-hard electronics for harsh environments-Reference-Cited by-同舟云学术

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GaN-based high-temperature and radiation-hard electronics for harsh environments

Published:2010-04-23 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Son Kyung-Ah,Liao Anna,Lung Gerald,Gallegos Manuel,Hatake Toshiro,Harris Richard D.,Scheick Leif Z.,Smythe William D.

Publisher

SPIE

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT;IEEE Transactions on Device and Materials Reliability;2022-06

2. Theoretical investigation of high-efficiency GaN–Si heterojunction betavoltaic battery;Canadian Journal of Physics;2019-09

3. Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs;Materials;2019-08-28

4. Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD;ACS Applied Electronic Materials;2019-07-19

5. Design and characterization of GaN p-i-n diodes for betavoltaic devices;Solid-State Electronics;2017-10

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