Design and characterization of GaN p-i-n diodes for betavoltaic devices-Reference-Cited by-同舟云学术

Design and characterization of GaN p-i-n diodes for betavoltaic devices

Published:2017-10 Issue: Volume:136 Page:24-29
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Khan Muhammad R.,Smith Joshua R.,Tompkins Randy P.,Kelley Stephen,Litz Marc^ORCID,Russo John,Leathersich Jeff,Shahedipour-Sandvik Fatemeh (Shadi),Jones Kenneth A.,Iliadis Agis

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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5. Radioisotope thin-film fueled micro fabricated reciprocating electromechanical power generator;Duggirala;Microelectromech Syst J,2008

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