High‐Performance Fully Transparent Ultraviolet Photodetector Fabricated Using GaN‐Based Schottky Barrier Photodiode

Abstract

Transparent electronics is a burgeoning field with exciting potential for next‐generation “see‐through” devices. The creation of high‐performance fully transparent ultraviolet photodetectors (PDs) is essential for enabling wearable and portable applications. In this study, metal–semiconductor–metal (MSM) type Al‐doped ZnO (AZO)/GaN/AZO and indium tin oxide (ITO)/GaN/ITO‐transparent ultraviolet PDs, are initially designed, utilizing AZO‐ and ITO‐transparent conductive electrodes. In these investigations, it is revealed that AZO and ITO form Ohmic and Schottky contacts, respectively, with GaN. Subsequently, building on these findings, a fully transparent Schottky barrier photodiode (SBPD) is developed for ultraviolet photodetection using AZO/GaN/ITO. The SBPD displays a high responsivity (R) of 1.41 × 103 A W−1, a detectivity (D*) of 6.85 × 1014 Jones, and a photo‐to‐dark current ratio exceeding 1 × 104 at a − 5 V bias. Furthermore, the SBPD demonstrates an ultrahigh responsivity of 1.18 A W−1 at 0 V bias, indicating its potential as a self‐powered device under extreme conditions. In these results, the tremendous potential of the high‐performance and fully transparent GaN‐based SBPD is demonstrated for environmental monitoring, optical communication, military radar, and other fields.