Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers-Reference-Cited by-同舟云学术

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Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers

Published:2015-05-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Korenev Vladimir V.,Savelyev Artem V.,Zhukov Alexey E.,Maximov Mikhail V.,Omelchenko Alexander V.

Publisher

SPIE

Reference8 articles.

1. Quantum dot diode lasers for optical communication systems

2. C.F. Lam (Elsevier, SanDiego, 2007), P. 158.

3. Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers

4. Effect of homogeneous broadening of optical gain on lasing spectra in self-assembledInxGa1−xAs/GaAsquantum dot lasers

5. Effects of Carrier Relaxation and Homogeneous Broadening on Dynamic and Modulation Behavior of Self-Assembled Quantum-Dot Laser

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Waveguide and Γ-factor optimization for low-divergence ridge lasers;Journal of Physics: Conference Series;2018-06

2. Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss;Applied Physics Letters;2017-09-25

3. Quantum dot laser optimization: selectively doped layers;Journal of Physics: Conference Series;2016-08

4. Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges;Journal of Physics: Conference Series;2015-11-02

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