Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss-Reference-Cited by-同舟云学术

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Effect of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss

Published:2017-09-25 Issue:13 Volume:111 Page:132103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Korenev V. V.¹²,Savelyev A. V.¹,Maximov M. V.¹²³,Zubov F. I.¹,Shernyakov Yu. M.¹³,Kulagina M. M.³,Zhukov A. E.¹²

Affiliation:

1. Nanophotonics Lab, St Petersburg Academic University, St Petersburg 194021, Russian Federation

2. Peter the Great St Petersburg Polytechnic University, St Petersburg 195251, Russian Federation

3. Ioffe Institute, St Petersburg 194021, Russian Federation

Funder

Russian Science Foundation (RSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5004268

Reference28 articles.

1. Quantum dot diode lasers for optical communication systems

2. Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots

3. C. F. Lam , Passive Optical Networks: Principles and Practice ( Elsevier, San-Diego, 2007), p.158.

4. Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser

5. Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers

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