Lithographic effects due to particles on high-NA EUV mask pellicle-Reference-Cited by-同舟云学术

Lithographic effects due to particles on high-NA EUV mask pellicle

Published:2019-08-29 Issue: Volume: Page:
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Container-title:35th European Mask and Lithography Conference (EMLC 2019)
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Author:

Devaraj Lokesh,Bottiglieri Gerardo,Erdmann Andreas,Wählisch Felix,Kupers Michiel,van Setten Eelco,Fliervoet Timon

Publisher

SPIE

Reference7 articles.

1. Mark van de Kerkhof et al., “Advanced particle contamination control in EUV scanners,” Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570U (26 March 2019).

2. Efficient simulation of EUV pellicles;Evanschitzky,2017

3. F. Wahlisch “PIR experimental and simulated CD impact of particles on an EUV pellicle”; ASML internal document (confidential): D000595363/00, (2017).

4. P.C. Ku, Nanophotonics and Nanoscale Fabrication, , (EECS 598-002 Winter 2006)

5. Contrast optimization for 0.33NA EUV Lithography;Finders;Proc. SPIE,2016

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