Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges-Reference-Cited by-同舟云学术

Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges

Published:2022-05-25 Issue: Volume: Page:
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Container-title:Advanced Etch Technology and Process Integration for Nanopatterning XI
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Author:

Raley Angélique,Huli Lior,Grzeskowiak Steven,Lutker-Lee Katie,Krawicz Alexandra,Feurprier Yannick,Liu Eric,Kato Kanzo,Nafus Kathleen,Dauendorffer Arnaud,Bae Nayoung,LaRose Josh,Metz Andrew,Hetzer Dave,Honda Masanobu,Nishizuka Tetsuya,Ko Akiteru,Okada Soichiro,Ido Yasuyuki,Onitsuka Tomoya,Kawakami Shinichiro,Fujimoto Seiji,Shimura Satoru,Dinh Cong Que,Muramatsu Makoto,Biolsi Peter,Mochiki Hiromasa,Nagahara Seiji

Publisher

SPIE

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1. Systematic and stochastic placement error divergence between low and high-NA EUV lithography;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

2. Assessing neutral transport mechanisms in aspect ratio dependent etching by means of experiments and multiscale plasma modeling;Plasma Sources Science and Technology;2023-06-01

3. Optimization of spin-on metal oxide resist performance via new development techniques on sub-30nm pitch patterning;Advances in Patterning Materials and Processes XL;2023-05-01

4. Recent advances in EUV patterning in preparation towards high-NA EUV;Advances in Patterning Materials and Processes XL;2023-05-01

5. Establishment of new process technology for EUV lithography;Advances in Patterning Materials and Processes XL;2023-05-01