Systematic and stochastic placement error divergence between low and high-NA EUV lithography
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Publisher
SPIE
Reference6 articles.
1. Depth of focus in high-NA EUV lithography: the role of assist features and their variability budget;Gronheid,2023
2. High-NA EUV Lithography Exposure Tool: Advantages and Program Progress;Van Schoot,2021
3. Angélique Raley, et. Al., “Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges,” Proc. SPIE 12056, Advanced Etch Technology and Process Integration for Nanopatterning XI, 120560A (25 May 2022)
4. Stochastic side-lobe printing in EUV lithography: a simulation study;Burov;JM3,2021
5. Depth of Focus in high-NA EUV Lithography: a simulation study;Pret;Proc. SPIE,2022
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