Mask absorber development to enable next-generation EUVL-Reference-Cited by-同舟云学术

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Mask absorber development to enable next-generation EUVL

Published:2019-06-27 Issue: Volume: Page:
ISSN:
Container-title:Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology
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Author:

Philipsen Vicky,Luong Vu,Opsomer Karl,Souriau Laurent,Rip Jens,Detavernier Christophe,Erdmann Andreas,Evanschitzky Peter,Laubis Christian,Hönicke Philipp,Soltwisch Victor,Hendrickx Eric

Publisher

SPIE

Reference15 articles.

1. Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

2. Modeling studies on alternative EUV mask concepts for higher NA;Erdmann,2013

3. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Genetic optimization of aperiodic multilayer masks for high and hyper-NA EUV lithography;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Proposal of cap layer design combined with absorber for EUV mask;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Study of MEEF improvement with low-n absorber EUVL mask;Optical and EUV Nanolithography XXXVII;2024-04-10

4. Identifying new absorber materials for EUV photomasks;Photomask Technology 2023;2023-11-21

5. Exploring photomask etching capabilities for new extreme ultraviolet absorber materials;Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology;2023-09-29

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