Simulation and analysis of the absorption enhancement in p-i-n InGaN/GaN solar cell using photonic crystal light trapping structures
Author:
Affiliation:
1. Malaviya National Institute of Technology, Department of Electronics and Communication Engineering, JLN Marg, Jaipur-302017, India
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics
Reference47 articles.
1. physica status solidi (b)
2. Unusual properties of the fundamental band gap of InN
3. Fabrication and characterization of InGaN p-i-n homojunction solar cell
4. High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
5. Absorption enhancement in InGaN-based photonic crystal-implemented solar cells
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1. The light-trapping effect in various textured cover glass for enhancing the current density in silicon heterojunction solar cells;Optics Communications;2020-07
2. Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy;Journal of Nanoscience and Nanotechnology;2020-06-01
3. Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure;Journal of Nanophotonics;2018-06-14
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