Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
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Published:2020-06-01
Issue:6
Volume:20
Page:3919-3924
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Tyagi Prashant1,
Ramesh Ch.1,
Kushvaha S. S.1,
Gupta Govind1,
Senthil Kumar M.1
Affiliation:
1. CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
Abstract
Evolution of GaN nanostructure grown on Si (111) substrate has been studied systematically using laser molecular beam epitaxial process. The in-situ reflection high energy electron diffraction and ex-situ high resolution X-ray diffraction studies reveal that the GaN nanostructures
have a hexagonal-wurtzite phase and grow along c-axis. The GaN morphology changes from compact granular layer to faceted pyramids to nanowall structure as a function of laser ablation frequency of the KrF excimer laser and radio frequency nitrogen plasma condition. It is observed that
GaN nanowall structure is formed on Si (111) when grown under strong nitrogen-rich flux at a higher growth rate and growth temperature. The crystalline and optical quality of the GaN nanostructures significantly improved with increase of laser ablation frequency. The nanowall structure shows
good optical emission properties with an intense, sharp near-band edge emission and a negligible deep band luminescence.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering