Preliminary study on atmospheric-pressure plasma-based chemical dry figuring and finishing of reaction-sintered silicon carbide-Reference-Cited by-同舟云学术

Preliminary study on atmospheric-pressure plasma-based chemical dry figuring and finishing of reaction-sintered silicon carbide

Published:2016-10-18 Issue:10 Volume:55 Page:105102
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Shen Xinmin¹,Deng Hui²,Zhang Xiaonan¹,Peng Kang¹,Yamamura Kazuya³

Affiliation:

1. PLA University of Science and Technology, College of Field Engineering, Research Center for Mechanical and Electrical Engineering, Haifu Street, Nanjing, Jiangsu 210007, China

2. Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore

3. Osaka University, Graduate School of Engineering, Research Center for Ultra-Precision Science and Technology, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Manufacture of large-scale lightweight SiC mirror for space

2. Rapid fabrication of lightweight silicon-carbide mirrors

3. Fabrication of liquid phase sintered SiC materials and their characterization

4. Development of high-strength reaction-sintered silicon carbide

5. Mechanism analysis on finishing of reaction-sintered silicon carbide by combination of water vapor plasma oxidation and ceria slurry polishing

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-precision diamond finishing of reaction-sintered silicon carbide enhanced by vibration-assisted photocatalytic oxidation;Journal of Materials Processing Technology;2024-10

2. Thermal oxidation polishing of pressureless sintered silicon carbide;Ceramics International;2024-03

3. Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching;Micromachines;2023-05-02

4. Investigation on Absorption and Diffusion of the Oxygen in the Asymmetric Face of the β-Silicon Carbide through the Born-Oppenheimer Molecular Dynamics;Journal of Physics: Conference Series;2021-05-01

5. Born-Oppenheimer Molecular Dynamics of OH Radical in the SiC Grains in the Reaction-Sintered Silicon Carbide;Journal of Physics: Conference Series;2021-05-01