Mechanism analysis on finishing of reaction-sintered silicon carbide by combination of water vapor plasma oxidation and ceria slurry polishing-Reference-Cited by-同舟云学术

Mechanism analysis on finishing of reaction-sintered silicon carbide by combination of water vapor plasma oxidation and ceria slurry polishing

Published:2015-05-22 Issue:5 Volume:54 Page:055106
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Shen Xinmin¹,Tu Qunzhang¹,Deng Hui²,Jiang Guoliang¹,Yamamura Kazuya²

Affiliation:

1. PLA University of Science and Technology, College of Field Engineering, Research Center for Mechanical and Electrical Engineering, Haifu street, Nanjing, Jiangsu 210007, China

2. Osaka University, Graduate School of Engineering, Research Center for Ultraprecision Science and Technology, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference16 articles.

1. Rapid fabrication of lightweight SiC mirror using CCOS

2. Manufacture of large-scale lightweight SiC mirror for space

3. Development of high-strength reaction-sintered silicon carbide

4. Fabrication of mullite-bonded porous silicon carbide ceramics by in situ reaction bonding

5. Study on tool wear characteristics in diamond turning of reaction-bonded silicon carbide

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