EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)-Reference-Cited by-同舟云学术

EUV resist sensitization and roughness improvement by PSCAR with in-line flood exposure system (Conference Presentation)

Published:2018-03-27 Issue: Volume: Page:
ISSN:
Container-title:Advances in Patterning Materials and Processes XXXV
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Author:

Carcasi Michael,Nagai Tomoki,Shima Motoyuki,Kimura Toru,Naruoka Takehiko,Hori Masafumi,Dei Satoshi,Vandenberghe Geert,Tagawa Seiichi,Miyake Masayuki,Nagahara Seiji,Shiraishi Gosuke,Minekawa Yukie,Ide Hiroyuki,Kondo Yoshihiro,Yoshihara Kosuke,Shimada Ryo,Tomono Masaru,Takeshita Kazuhiro,Moriya Teruhiko,Makoto Hayakawa,Aizawa Ryo,Konishi Yoshitaka,Shiozawa Takahiro,Nafus Kathleen,Biesemans Serge,Nakashima Hideo,Nakagawa Hisashi,De Simone Danilo,Philippe Foubert,Oshima Akihiro

Publisher

SPIE

Reference20 articles.

1. EUV resists: What’s next?;Lio,2016

2. Progress in EUV lithography toward manufacturing;Kim,2017

3. EUV Lithography: From the Very Beginning to the Eve of Manufacturing;Yen,2016

4. Line-Edge Roughness and the Impact of Stochastic Processes on Lithography Scaling for Moore’s Law;Mack,2014

5. Line edge roughness impact on critical dimension variation;Ma,2007

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3. EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity and stochastic defectivity;Advances in Patterning Materials and Processes XXXVII;2020-03-30

4. Simulation of photoresist defect transfer through subsequent patterning processes;Advanced Etch Technology for Nanopatterning IX;2020-03-23