EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity and stochastic defectivity-Reference-Cited by-同舟云学术

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EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity and stochastic defectivity

Published:2020-03-30 Issue: Volume: Page:
ISSN:
Container-title:Advances in Patterning Materials and Processes XXXVII
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Author:

Nagahara Seiji,Dinh Cong Que,Yoshida Keisuke,Shiraishi Gosuke,Kondo Yoshihiro,Yoshihara Kosuke,Nafus Kathleen,Petersen John S.,De Simone Danilo,Foubert Philippe,Vandenberghe Geert,Stock Hans-Jürgen,Meliorisz Balint

Publisher

SPIE

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization strategy for epoxy cross-linked molecular glass photoresist in EUV lithography;Journal of Photochemistry and Photobiology A: Chemistry;2024-08

2. Dissolution dynamics of poly(4-hydroxystyrene) partially protected with t-butoxycarbonyl group in alkyltrimethylammonium hydroxide aqueous developers;Japanese Journal of Applied Physics;2024-07-01

3. Advanced development for contact-holes of metal-oxide resists;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

4. Multi-Trigger Resist for EUV lithography;Journal of Photopolymer Science and Technology;2023-06-15

5. EUV lithography patterning using multi-trigger resist;Advances in Patterning Materials and Processes XL;2023-05-01

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