Modeling time-dependent dielectric breakdown with and without barriers

Author:

Plawsky Joel L.

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference51 articles.

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4. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, and J. Aitken , “A comprehensive study of Low-k SiCOH TDDB phenomena and its reliability lifetime model,” inProc. IEEE Int. 44th Annual Reliability Physics Symposium, C. Grass , Ed., pp. 46–53 (2006).

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1. Impact of interfacial solubility on penetration of metals into dielectrics and the mechanism of failure;Journal of Materials Science: Materials in Electronics;2011-05-21

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