Toward defect guard-banding of EUV exposures by full chip optical wafer inspection of EUV mask defect adders-Reference-Cited by-同舟云学术

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Toward defect guard-banding of EUV exposures by full chip optical wafer inspection of EUV mask defect adders

Published:2015-04-06 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Halle Scott D.,Meli Luciana,Delancey Robert,Vemareddy Kaushik,Crispo Gary,Bonam Ravi,Burkhardt Martin,Corliss Daniel

Publisher

SPIE

Reference12 articles.

1. E-beam inspection of EUV programmed defect wafers for printability analysis;Bonam,2013

2. E-beam inspection of EUV mask defects: To etch or not to etch?

3. Printability study of pattern defects in the EUV mask as a function of hp nodes

4. EUV mask defect analysis from mask to wafer printing

5. Electron beam inspection of 16nm HP node EUV masks;Shimomura,2012

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EUV vote-taking lithography for mitigation of printing mask defects, CDU improvement, and stochastic failure reduction;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-09-17

2. EUV vote-taking lithography: crazy... or not?;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

3. Detection of Printable EUV Mask Absorber Defects and Defect Adders by Full Chip Optical Inspection of EUV Patterned Wafers;IEEE Transactions on Semiconductor Manufacturing;2017-11

4. Vote-taking for EUV lithography: a radical approach to mitigate mask defects;SPIE Proceedings;2017-03-24

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