Vote-taking for EUV lithography: a radical approach to mitigate mask defects-Reference-Cited by-同舟云学术

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Vote-taking for EUV lithography: a radical approach to mitigate mask defects

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Brunner Timothy A.¹,Ozlem Melih¹,Han Geng¹,Rankin Jed¹,Wood Obert¹,Verduijn Erik¹

Affiliation:

1. GLOBALFOUNDRIES Inc. (United States)

Publisher

SPIE

Reference13 articles.

1. EUV Lithography: From the Very Beginning to the Eve of Manufacturing;Yen,2016

2. EUV progress toward HVM readiness;Turkot,2016

3. Insertion strategy for EUV lithography;Wood,2012

4. Assessing EUV mask defectivity;Okoroanyanwu,2010

5. Masks for Extreme Ultraviolet Lithography;Yan,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of chemically amplified resist formulation based on simple random sampling and kernel density estimation;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-05-15

2. Defect repairs for the extreme ultraviolet mask;Extreme Ultraviolet (EUV) Lithography XII;2021-02-21

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