-Reference-Cited by-同舟云学术

TaN EUVL mask fabrication and characterization

Author:

Yan Pei-yang,Zhang Guojing,Ma Andy,Liang Ted

Publisher

SPIE

Cited by 40 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ion beam etch for the patterning of advanced absorber materials for EUV masks;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

2. Ion beam etching of new absorber materials for sub-5nm EUV masks;Extreme Ultraviolet (EUV) Lithography X;2019-03-26

3. Ion beam processing for critical EUV photomask process steps: mask blank deposition and photomask absorber etch;International Conference on Extreme Ultraviolet Lithography 2018;2018-10-03

4. Mask Materials and Designs for Extreme Ultra Violet Lithography;Electronic Materials Letters;2018-03-21

5. Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01

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