Line roughness formation during plasma etch: mechanism and reduction
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Publisher
SPIE
Reference12 articles.
1. Line Pattern Collapse Mitigation Status for EUV at 32nm HP and below;Carcasi,2012
2. Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist
3. Mechanistic understanding of post-etch roughness in 193-nm photoresists;Bae,2003
4. Investigation of surface modifications of 193 and 248 nm photoresist materials during low-pressure plasma etching
5. Study of 193 nm photoresist degradation during short time fluorocarbon plasma exposure. I. Studies of modified layer formation
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1. Multiple regression analysis of postdevelop unbiased line width roughness and etch resistance for high-accuracy estimations of postetch pattern roughness;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-14
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