Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs-Reference-Cited by-同舟云学术

Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Kim Ryoung-Han¹,Wood Obert¹,Crouse Michael²,Chen Yulu¹,Plachecki Vince²,Hsu Stephen²,Gronlund Keith²

Affiliation:

1. GLOBALFOUNDRIES Inc. (United States)

2. ASML Brion (United States)

Publisher

SPIE

Reference6 articles.

1. EUV pattern shift compensation strategies;Schmoeller,2008

2. Implementation of assist features in EUV lithography;Jiang,2015

3. Impact of stochastic effects on EUV printability limits;De Bisschop,2014

4. EUV resolution enhancement techniques (RETs) for k1 0.4 and below;Hsu,2015

5. Stochastic exposure kinetics of EUV photoresists: a simulation study;Mack,2011

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