Double patterning with dual hard mask for 28-nm node devices and below-Reference-Cited by-同舟云学术

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Double patterning with dual hard mask for 28-nm node devices and below

Published:2013-10-01 Issue:4 Volume:12 Page:041306
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hody Hubert,Paraschiv Vasile,Vecchio Emma,Locorotondo Sabrina,Winroth Gustaf,Athimulam Raja,Boullart Werner

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron and high-k dielectrics: Possible fourth etch stop colors for multipattern optical lithography processing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-03

2. Combinatorial survey of fluorinated plasma etching in the silicon-oxygen-carbon-nitrogen-hydrogen system;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11

3. Ant Colony Optimization-Based Freeform Sources for Enhancing Nanolithographic Imaging Performance;IEEE Transactions on Nanotechnology;2016-07

4. Gate double patterning strategies for 10-nm node FinFET devices;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-03-05

5. Line-edge roughness and the impact of stochastic processes on lithography scaling for Moore's Law;Photonic Innovations and Solutions for Complex Environments and Systems (PISCES) II;2014-09-05

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