EBL2, a flexible, controlled EUV exposure and surface analysis facility

Author:

te Sligte Edwin,Koster Norbert,Molkenboer Freek,Deutz Alex

Publisher

SPIE

Reference6 articles.

1. Strategy for Minimizing EUV Optics Contamination During Exposure;Noreen,2008

2. A New Mask Exposure and Analysis Facility;te Sligte,2014

3. Yusuke Teramoto, Bárbara Santos, Guido Mertens, Ralf Kops, Margarete Kops, Alexander von Wezyk, Hironobu Yabuta, Akihisa Nagano, Takahiro Shirai, Noritaka Ashizawa, Kiyotada Nakamura, Kunihiko Kasama, “High-radiance LDP source for mask-inspection application,” in Extreme Ultraviolet (EUV) Lithography VI, Proc. of SPIE Vol. 9422 (SPIE, San Jose, CA, March 2015), pp. 94220F-1-9.

4. SEMI E152-0214 - Mechanical Specification of EUV Pod for 150 mm EUVL Reticles

5. Andreas Mack, Jacques van der Donck, Olaf Kievit, “Numerical Modeling of Particle Transport in Rarefied Flow”, http://www2.avs.org/symposium2014/Papers/Paper_VT-TuM6.html

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1. Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests;Journal of Vacuum Science & Technology B;2023-01-01

2. Additional real-time diagnostics on the EBL2 EUV exposure facility;Extreme Ultraviolet (EUV) Lithography XI;2020-03-23

3. Lifetime test on EUV photomask with EBL2;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

4. EUV mask lifetime testing using EBL2;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

5. Ptychographic imaging with partially coherent plasma EUV sources;Advanced Optical Technologies;2017-12-20

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