Accurate mapping of dose variations on EUV scanners using dose-to-clear exposures and optical ellipsometry-Reference-Cited by-同舟云学术

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Accurate mapping of dose variations on EUV scanners using dose-to-clear exposures and optical ellipsometry

Published:2020-10-13 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet Lithography 2020
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Author:

Nair Vineet Vijayakrishnan,van Look Lieve,Aubert Remko,Hendrickx Eric

Publisher

SPIE

Reference8 articles.

1. EUV for HVM: Towards an Industrialized Scanner for HVM NXE3400B Performance Update;van Es,2018

2. EUV Progress toward HVM Readiness;Britt,2016

3. Improvements in Resist Performance towards EUV HVM;Oktay,2017

4. Peter, “Stochastic effects in EUV lithography: random, local CD variability, and printing failures;De Bisschop;Journal of Micro/Nanolithography, MEMS and MOEMS,2017

5. Stochastic Printing Failures in EUV Lithography;De Bisschop,2019

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Lines and Spaces printing and general understanding of imaging with dark field low-n mask;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-04-17

2. Carbon nanotube pellicles: imaging results of the first full-field extreme ultraviolet exposures;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-05-27

3. CNT pellicles: Imaging results of the first full-field EUV exposures;Extreme Ultraviolet (EUV) Lithography XII;2021-02-23

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