Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification-Reference-Cited by-同舟云学术

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Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification

Published:1999-06-11 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Hattori Takashi,Tsuchiya Yuko,Yokoyama Yoshiyuki,Oizumi Hiroaki,Morisawa Taku,Yamaguchi Atsuko,Shiraishi Hiroshi

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Topcoat-free ArF negative tone resist;Advances in Resist Materials and Processing Technology XXVI;2009-03-13

2. Evaluation of a Negative 193nm DUV Resist for the 45nm Node: Lithography, Degradation Kinetics during Etch and Implant.;Journal of Photopolymer Science and Technology;2007

3. Development of high-performance negative-tone resists for 193-nm lithography;Advances in Resist Technology and Processing XX;2003-06-11

4. Development of High-Performance Negative-tone Resists for 193-nm Lithography;Journal of Photopolymer Science and Technology;2003

5. Negative (meth)acrylate resist materials based on novel crosslinking chemistry;Microelectronic Engineering;2001-09

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