Development of High-Performance Negative-tone Resists for 193-nm Lithography

Author:

Hattori Takashi1,Yokoyama Yoshiyuki2,Kimura Kaori3,Yamanaka Ryoko1,Tanaka Toshihiko1,Fukuda Hiroshi1

Affiliation:

1. Central Research Laboratory, Hitachi Ltd.

2. Current address: Toyama Industrial Technology Center, The Central Research Institute

3. Hitachi ULSI Systems Co. Ltd.

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Manipulation of Polymer Solubility: Crosslinking, Thermal Activation and Variable-Temperature Bakes;Journal of Photopolymer Science and Technology;2023-06-15

2. Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03

3. Photoresists and Advanced Patterning;Polymer Science: A Comprehensive Reference;2012

4. Evaluation of adamantane derivatives for chemically amplified resist: a comparison between ArF, EUV, and EB exposures;Advances in Resist Materials and Processing Technology XXV;2008-03-14

5. Chemical Amplification Resists for Microlithography;Microlithography · Molecular Imprinting;2005-02-03

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