Development of standard samples with programmed defects for evaluation of pattern inspection tools for 7-nm and smaller nodes

Author:

Iida Susumu1,Nagai Takamitsu1,Uchiyama Takayuki1

Affiliation:

1. Evolving Nano Process Infrastructure Development Center, Inc., Ibaraki-ken

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 先进节点图案化晶圆缺陷检测技术;Laser & Optoelectronics Progress;2023

2. Optical wafer defect inspection at the 10 nm technology node and beyond;International Journal of Extreme Manufacturing;2022-04-21

3. Investigation on helium ion beam lithography with proximity effect correction;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-07-29

4. Precision fabrication of EUVL programmed defects with helium ion beam patterning;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-04-27

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